| 摘要 |
A hybrid image sensor includes an infrared detector array and a CMOS readout integrated circuit (ROIC). The CMOS ROIC is coupled to at least one detector of the IR detector array, e.g., via indium bump bonding. Each pixel of the CMOS ROIC includes a first, relatively lower gain, wide dynamic range amplifier circuit which is optimized for a linear response to high light level input signals from the IR detector. Each pixel also includes a second, relatively higher gain, lower dynamic range amplifier circuit which is optimized to provide a high signal to noise ratio for low light level input signals from the IR detector (or from a second IR detector). A first output select circuit is provided for directing the output of the first circuit to a first output multiplexer. A second output select circuit is provided for directing the output of the second circuit to a second output multiplexer. Thus, separate outputs of the first and second circuits are provided for each of the individual pixel sensors of the CMOS imaging array.
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