SURFACE REFORMATION METHOD OF GROUP III NITRIDE SUBSTRATE, GROUP III NITRIDE SUBSTRATE PREPARED THEREFROM, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE WITH THE SAME

摘要

A surface reformation method of a group III nitride substrate, a group III nitride substrate manufactured thereby, and a nitride semiconductor light emitting device using the same group III nitride substrate are provided to prevent a lowering effect of performance by forming a surface reformation layer. A first surface reformation layer(121) and a second surface reformation layer(122) are formed on an upper surface of a GaN substrate(110) and an upper surface of an n-type nitride clad layer(130), respectively. An active layer(150) is formed with a multi-quantum well structure including a quantum well layer and a quantum barrier layer. The active layer has a predetermined band gap. A p-type nitride layer(160) is formed with a p-GaN layer. A p-type nitride clad layer(170) is formed with a p-AlGaN clad layer. A p-electrode(180) is formed on one side of an upper surface of the p-type nitride clad layer.