发明名称 TRANSISTOR MOS ADAPTE A LA TENUE DE FORTS COURANTS
摘要 <p>The transistor (32) has doped areas corresponding to two main terminals of elementary MOS transistors, and including a shape of parallel strips separated by gate regions. Two set of conductive elements (54, 56 and 58, 60) are not partially extended on the doped areas corresponding to one of two main terminals. The conductive elements are divided into two set of fingers that are partially extended on the doped areas corresponding to another main terminals, respectively, where one set of fingers are partially intercalated with another set of fingers.</p>
申请公布号 FR2911005(B1) 申请公布日期 2009.06.12
申请号 FR20060055981 申请日期 2006.12.27
申请人 STMICROELECTRONICS SA SOCIETE ANONYME 发明人 MAJCHERCZAK SANDRINE;TINELLA CARLO;RICHARD OLIVIER;CATHELIN ANDREA
分类号 H01L23/528;H01L27/02;H01L29/78 主分类号 H01L23/528
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