发明名称 RESIST PRIMER FILM FORMING COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist primer film forming composition that can be applied uniformly, does not require any cross linking agents, and provides a resist primer film having good adhesion to an organic resist. <P>SOLUTION: A lithographic resist primer film forming composition contains: a silicon containing polymer having a group that is a silanol group with at least one kind of capping group substituted for hydrogen atoms, and a silanol group; and a solvent. The capping group contains a group represented by formula (1), wherein at least one of Q<SP>1</SP>to Q<SP>3</SP>is a substituent selected from the group consisting of an alkynyl group, a cycloalkyl group, a cycloalkenyl group, a phenyl group, an adamantyl group and a norbornenyl group, or an organic group containing the substituent. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009128564(A) 申请公布日期 2009.06.11
申请号 JP20070302577 申请日期 2007.11.22
申请人 NISSAN CHEM IND LTD 发明人 IMAMURA HIKARI
分类号 G03F7/11;G03F7/075;G03F7/40;H01L21/027 主分类号 G03F7/11
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