发明名称 ENHANCED TOGGLE-MRAM MEMORY DEVICE
摘要 A toggle-MRAM device is disclosed that uses an SAF composite and lowers the operating field substantially with a wide operating field margin and high thermal stability using specific magnetic parameters. Consequently, this device enhances the performance of MRAM's, especially in its large operating field margin and high thermal stability characteristics with a low current.
申请公布号 WO2007053517(A3) 申请公布日期 2009.06.11
申请号 WO2006US42218 申请日期 2006.10.30
申请人 THE UNIVERSITY OF ALABAMA;FUJIWARA, HIDEO;WANG, SHENG-YUAN 发明人 FUJIWARA, HIDEO;WANG, SHENG-YUAN
分类号 G11C11/02 主分类号 G11C11/02
代理机构 代理人
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