发明名称 |
ENHANCED TOGGLE-MRAM MEMORY DEVICE |
摘要 |
A toggle-MRAM device is disclosed that uses an SAF composite and lowers the operating field substantially with a wide operating field margin and high thermal stability using specific magnetic parameters. Consequently, this device enhances the performance of MRAM's, especially in its large operating field margin and high thermal stability characteristics with a low current.
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申请公布号 |
WO2007053517(A3) |
申请公布日期 |
2009.06.11 |
申请号 |
WO2006US42218 |
申请日期 |
2006.10.30 |
申请人 |
THE UNIVERSITY OF ALABAMA;FUJIWARA, HIDEO;WANG, SHENG-YUAN |
发明人 |
FUJIWARA, HIDEO;WANG, SHENG-YUAN |
分类号 |
G11C11/02 |
主分类号 |
G11C11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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