GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor device that is reducible in element size by decreasing bonding pads and improved in resistance by preventing avalanche destruction, and to provide a method of manufacturing the same. SOLUTION: The GaN-based semiconductor device 20 has a source electrode 31 and a drain electrode 32 configured such that a current flows between the two electrodes through an active layer 25 in an on-state, a gate electrode 33, and a reverse-surface electrode 34. A groove 27 which is deep enough to reach a silicon substrate 21 from the top surface side of the active layer 25 is formed in a portion of the active layer 25 which forms the source electrode 31. In the groove 27, the source electrode 31 which electrically connects the top surface of the active layer 25 to the silicon substrate 21 and an insulating layer 70 which insulates a portion of the source electrode 31 in the groove 27 from the active layer 25 are formed. The source electrode 31 and insulating layer 70 are thus formed in the groove 27, so it becomes easier to form the groove 27 and insulating film 70. COPYRIGHT: (C)2009,JPO&INPIT