摘要 |
A semiconductor is manufactured by forming a gamma-aluminum oxide layer on a semiconductor substrate, forming a semiconductor layer on the gamma-aluminum oxide layer, forming an exposed portion for exposing a part of the gamma-aluminum oxide layer through the semiconductor layer, forming a support which is formed of a material having an etching rate smaller than that of the gamma-aluminum oxide layer and which supports the semiconductor layer on the semiconductor substrate, forming a cavity between the semiconductor substrate and the semiconductor layer, forming a buried insulating layer in the cavity, forming a gate electrode on the semiconductor layer with a gate insulating layer therebetween and forming source/drain layers, which are disposed on both sides of the gate electrode, in the semiconductor layer.
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