| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a gas supply device capable of effectively correcting characteristics of the outermost periphery of a substrate. <P>SOLUTION: The gas supply device 60 includes: a shower head 16; a processing gas supply unit 66 which supplies processing gas toward the shower head 16; a processing gas supply flow path 64 which makes the processing gas from the process gas supply unit 66 flow; branch flow paths 64a and 64b which branch off from the processing gas supply flow path 64 to supply the processing gas to the shower head 16; an additional gas supply unit 75 which supplies additional gas toward the shower head 16; and a gas supply flow path 76 which makes the additional gas from the additional gas supply unit 75 flow to the shower head 16. The shower head 16 has: first and second gas introduction units 51 and 52 which supply gas to an arrangement region for a wafer; and a third gas introduction unit 53 which supplies the gas to the outside of the external edge of the wafer. The branch flow paths 64a and 64b are connected to second gas introduction units 51 and 52. The additional gas supply flow path 76 is connected to the third gas introduction unit 53. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
