| 摘要 |
PROBLEM TO BE SOLVED: To provide a gate insulating film with good characteristics that a thin film transistor has, the thin film transistor substrate having the gate insulating film, and a manufacturing method thereof. SOLUTION: The gate insulating film is made of silicon oxide which a silicon thin film transistor substrate has, [Δ/d]<0.0045 being satisfied, whereΔV (V) is the difference between a gate voltage value when the value of a gate leak current flowing into the gate insulating film from a gate electrode varies from positive to negative when a gate voltage is swept from a positive voltage to a negative voltage and a gate voltage value when the value of the gate leak current flowing into the gate insulating film from the gate electrode varies from negative to positive when the gate voltage is swept from a negative voltage to a positive voltage, and d(nm) is the thickness of the gate insulating film. COPYRIGHT: (C)2009,JPO&INPIT
|
