| 摘要 |
A ceramic electronic device having a dielectric layer, wherein the dielectric layer includes a main component containing a (Ba, Ca (Ti, Zr)O3 based material and a subcomponent containing an oxide of Si; and a content of the Si oxide is 0 to 0.4 wt % (note that 0 is not included) with respect to the entire dielectric layer; and preferably the dielectric layer has a segregation phase; and the segregation phase contains an oxide of Si and substantially not containing an oxide of Li; by which it is possible to provide a ceramic electronic device, such as a multilayer ceramic capacitor, having a low IR defect rate (initial insulation resistance defect rate), excellent high temperature load lifetime and high reliability.
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