GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE FABRICATION METHOD, AND GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE

摘要

A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a group III nitride semiconductor crystal doped with silicon by using silicon tetrafluoride gas as doping gas, on the underlying substrate by vapor phase growth.