| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning liquid with which etching residues remaining after a dry etching in a wiring process of a semiconductor device or a display device subjected to a copper wiring to be used for a semiconductor integrated circuit, or the like can perfectly be removed in a short period of time, and a copper wiring material, insulation film material or the like cannot be oxidized or corroded. SOLUTION: The cleaning liquid is characterized in that it deposits the copper wiring 1, a silicon nitride film 2 and a silicon oxide film 3 on a substrate, applies a resist on it, after development, continuously performs dry etching, removes the remaining resist and after that, cleans the etching residue 4, in the cleaning acid, nitric acid concentration is 0.005-5 wt.%, sulphuric acid concentration is 0.001-10 wt.%, sulphuric acid/nitric acid ratio by weight is 1-100, concentration of fluorine compound is 0.005-10 wt.%, and concentration of water whose pH is adjusted to 3-7 by adding basic compound is≥80 wt.%. COPYRIGHT: (C)2009,JPO&INPIT
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