发明名称 MASKING PROCESS USING PHOTORESIST
摘要 <p>The invention provides a masking process using photoresist, comprising: attaching a compress mask plate to a substrate; coating photoresist in a mask pattern of the compress mask plate; baking the photoresist from the substrate side; removing the compress mask plate from the substrate to form a desired photoresist pattern on the substrate. The inventive method simplifies the photolithography process, thereby the process time is shortened and the yield is increased.</p>
申请公布号 KR20090050924(A) 申请公布日期 2009.05.20
申请号 KR20080050385 申请日期 2008.05.29
申请人 BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 PIAO YUNFENG;PARK, CHUN BAE
分类号 H01L21/027;G02F1/13;G03F7/004;G03F7/20 主分类号 H01L21/027
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