HIGH ELECTRON MOBILITY TRANSISTOR SEMICONDUCTOR DEVICE HAVING ELECTRIC FIELD RELAXING PLATE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing process for minimizing a deteriorating mechanism because of a high electric field, and for manufacturing an HEMT device suitable for a reliable micro-wave and millimeter wave frequency operation. SOLUTION: The semiconductor device includes a T gate arranged between a drain area and source area on a barrier layer since a channel layer and a shot key contact are formed. The first inactive electric field relaxing plate is arranged on a portion of the T gate and the second active field plate is arranged in the neighborhood of the T gate on the barrier layer. COPYRIGHT: (C)2009,JPO&INPIT