| 摘要 |
A light emitting device is disclosed. The light emitting device includes a substrate including a thin film transistor, an insulating film disposed over the thin film transistor, a first electrode disposed over the thin film transistor and connected to the thin film transistor, a function layer including at least one of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer, which are sequentially disposed over the first electrode, and a second electrode disposed on the function layer. A thickness of the first electrode is substantially 0.29 to 0.35 times a thickness of the function layer. A thickness of the second electrode is substantially 0.29 to 0.69 times the thickness of the function layer.
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