| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for epitaxial growth, by which the occurrence of such a defect as the cross-hatching, etc., can be prevented effectively, in the course of epitaxial growth performed for successively growth of an InGaAs or InGaAsP layer and an InP layer on an InP substrate sequentially. SOLUTION: This method for epitaxial growth includes a step of forming a first compound semiconductor layer, consisting of elements A, B, and C or A, B, C, and D on a semiconductor substrate using the metal organic vapor phase growth method, while the substrate is held by means of a substrate supporting tool and a heterojunction forming step of forming a second compound semiconductor layer from the elements A and D. In this method, infiltration of a source gas to the rear surface side of the semiconductor substrate is prevented, by narrowing the gap between the rear surface of the sub substrate and substrate supporting tool, desirably by preventing the formation of the gap by using a semiconductor wafer controlled in rear-surface warping to 20μm as the substrate. COPYRIGHT: (C)2003,JPO
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