Förfarande för tillverkning av en kiselkarbid-halvledarkrets

摘要

A method for manufacturing a silicon carbide semiconductor apparatus is disclosed. According to the method, an element structure is formed on a front surface side of a semiconductor substrate. A rear surface of the semiconductor substrate is grinded or polished in a direction parallel to a flat surface of a table. A front surface of the semiconductor substrate is grinded and polished in a direction parallel to the rear surface after the rear surface of the semiconductor substrate is grinded or polished.