| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device and the semiconductor device, which can form a contacting plug on a wiring without its faulty conduction. SOLUTION: The semiconductor device manufacturing method includes a process for forming a wiring on a substrate, a process for forming a first film on the wiring, a process for forming a second film on the first film, a process for forming a third film by using a material having a lower etching resistance than that of the second film, on the second film, a process for forming a region including an end portion of the third film and having a film thickness different from that of other than the end portion of the third film, on the second film present above the wiring, a process for forming an inter-layer insulating film on the second or third film, and a process for forming a contacting plug connected with the wiring, in the shape region. COPYRIGHT: (C)2009,JPO&INPIT |
