CRUCIBLE FOR GROWTH OF SILICON CARBIDE SINGLE CRYSTAL, METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL USING THE SAME, AND SILICON CARBIDE SINGLE CRYSTAL INGOT

摘要

PROBLEM TO BE SOLVED: To provide a crucible for the growth of a SiC single crystal for producing a high quality SiC single crystal wafer which is reduced in transfer defect and has a large diameter, with high reproducibility. SOLUTION: In an apparatus for the growth of the SiC single crystal by a sublimation re-crystallization method, the whole of the crucible is composed of a 2 or more kinds of materials each having different thermal expansion coefficient and a crucible component material of a seed crystal holding part 4 to which the SiC seed crystal 1 is attached has thermal expansion coefficient substantially smaller than that of another part. At least one kind of a component material of the crucible is made from graphite and the thermal expansion coefficient of the seed crystal holding part 4 at 2,000°C is 5.0-5.5×10-6/°C. COPYRIGHT: (C)2009,JPO&INPIT