| 摘要 |
PROBLEM TO BE SOLVED: To improve precision of the thickness of an SiC wafer by making small a difference between the maximum thickness and the minimum thickness of the SiC wafer. SOLUTION: After the ingot of SiC is sliced (Fig. 3(a)) and both surfaces 41 and 42 of a workpiece 40 are roughly ground (Fig. 3(b), 3(c)), the top surface 41 of the workpiece 40 is ground and polished to be smoothed (Fig. 3(d)). Then the reverse surface 42 of the work 30 is ground with the top surface 41 of the workpiece as a reference 40 (Fig. 3(e)). Consequently, even when the precision of the thickness of the work 40 become worse as the top surface 41 of the work 40 is polished to be smoothed, the SiC wafer can be obtained which has a high-precision thickness. COPYRIGHT: (C)2009,JPO&INPIT
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