发明名称 Semiconductor memory cell and corresponding method of producing same
摘要 A semiconductor memory cell and production method provides a storage capacitor connected to a selection transistor. The storage capacitor is formed as a contact hole capacitor in at least one contact hole for a source or drain region. Such a semiconductor memory cell can be produced cost-effectively and allows a high integration density.
申请公布号 US7531420(B2) 申请公布日期 2009.05.12
申请号 US20060493252 申请日期 2006.07.26
申请人 INFINEON TECHNOLOGIES AG 发明人 NIRSCHL THOMAS;OLBRICH ALEXANDER;OSTERMAYR MARTIN
分类号 H01L21/20;H01L21/02;H01L21/8242;H01L27/108 主分类号 H01L21/20
代理机构 代理人
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