发明名称 |
Semiconductor memory cell and corresponding method of producing same |
摘要 |
A semiconductor memory cell and production method provides a storage capacitor connected to a selection transistor. The storage capacitor is formed as a contact hole capacitor in at least one contact hole for a source or drain region. Such a semiconductor memory cell can be produced cost-effectively and allows a high integration density.
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申请公布号 |
US7531420(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20060493252 |
申请日期 |
2006.07.26 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
NIRSCHL THOMAS;OLBRICH ALEXANDER;OSTERMAYR MARTIN |
分类号 |
H01L21/20;H01L21/02;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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