GROWTH OF SELF-ASSEMBLED GAN NANOWIRES AND APPLICATION IN NITRIDE SEMICONDUCTOR BULK MATERIAL

摘要

Self-assembled quantum dots (QDs) are well-suited as seeds for small pitch, uniform nanowires formed across large wafers. In one embodiment, after the formation of GaN QDs, the growth condition is switched to pulsed MOCVD mode to form high density small pitch GaN nanowires from the QD seeds. After the GaN nanowires reach a desired height, the growth condition is switched to coalescence MOCVD mode and a high quality GaN epi layer is formed through the coalescence of the GaN nanowires.