| 摘要 |
PROBLEM TO BE SOLVED: To easily achieve a multi-valued mask ROM. SOLUTION: The mask ROM (100) includes a plurality of memory cells (MC). The plurality of memory cells (MC) each include a first terminal (T1), a second terminal (T2), and a transistor (TR) having a source and a drain connected to the first terminal (T1) and the second terminal (T2), respectively. A first memory cell (MC2) out of the plurality of memory cells (MC) further includes a first resistive interconnection (21) for electrically connecting between the first terminal (T1) to the second terminal (T2). The resistance value of the first resistive interconnection (21) depends on data stored onto the first memory cell (MC2). COPYRIGHT: (C)2009,JPO&INPIT
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