<p>A method of manufacturing an integrated circuit (100) that comprises fabricating a semiconductor device (105). Fabricating the device includes depositing a photoresist layer (110) on a substrate (115) surface (117) and implanting one or more dopant species through openings in the photoresist layer into the substrate, and, into the photoresist layer, thereby forming an implanted photoresist layer. Fabricating the device also includes removing the implanted photoresist layer. Removing the implanted photoresist layer includes exposing the implanted photoresist layer to a mixture that includes sulfuric acid, hydrogen peroxide and ozone. The mixture is at a temperature of at least about 130°.</p>
