| 摘要 |
<p>PROBLEM TO BE SOLVED: To manufacture and provide a highly reliable display device comprising a thin film transistor which has high aperture ratio and stable electric characteristics.SOLUTION: In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is an oxide semiconductor film, heat treatment (heat treatment for dehydration or dehydrogenation) for improving purity of the oxide semiconductor film and reducing moisture and the like which are impurities is performed. Further, aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer by using conductive films having light transmitting properties.</p> |
