| 摘要 |
An image sensor may include a semiconductor substrate including a device isolating film and a light receiving device; an insulating film on the semiconductor substrate; a barrier; a metal wire layer on the insulating film; a trench between adjacent metal wires having a protective film pattern on sidewalls thereof; and a photosensitive material in the trench. A method for manufacturing an image sensor may comprise forming an insulating film on a semiconductor substrate, the semiconductor substrate having a device isolating film, a barrier and a light receiving device; forming a metal wire layer on the insulating film; forming a trench between adjacent metal wires; forming a protective film pattern on sidewall surfaces of the trench; forming a photosensitive material over the metal wire layer and in the trench; and planarizing the semiconductor substrate to remove portions of the photosensitive material over the metal wire layer.
|
