SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A semiconductor device and a method for manufacturing the same are provided to prevent electrical connection between active regions by suppressing the growth of a source/drain lifted by a lower spacer unit of a gate spacer in a transverse direction. A semiconductor device includes a cell region and a peripheral circuit region. A substrate(100) includes an active region and a field region(105). A gate trench is formed in a part with a word line in the active region. The word line including a gate electrode(115), a silicide film(117), a gate mask(120) and a gate spacer(125) are formed on the gate trench. The gate spacer includes the oxide and/or the silicon nitride. A first contact region(130) and a second contact region(135) are formed by implanting the ion to the substrate between the gate structures by suing a gate mask and a gate spacer. The source and drain(140) is formed on the first and second contact region.