| 摘要 |
An output circuit of a memory is provided. The output circuit includes a first pre-charge circuit, a multiplexer, and a sense amplifier. The first pre-charge circuit pre-charges the voltage of a target readout bit line to the logic high level according to a pre-charge signal. The multiplexer selects the target readout bit line from multiple readout bit lines according to a selecting signal. The sense amplifier detects the voltage of the target readout bit line after the target memory cell is selected to be readout.
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