NONVOLATILE MEMORY DEVICE INCLUDING DOUBLE SPACERS ON SIDEWALL OF FLOATIONG GATE, ELECTRONIC DEVICE INCLUDING THE NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE NONVOLATILE MEMORY DEVICE

摘要

A nonvolatile memory device including double spacers on the sidewall of a floating gate, an electronic device including the nonvolatile memory device and method of fabricating the same is provided to increase the distance between a control gate lines by forming a double space on the side wall of the floating gates. An element isolation film(115) is formed on the inner side of a semiconductor and limits a plurality of active areas(ACT). A plurality of floating gates(133f) is located on the active areas, and a control gate line(WL) is overlapped with the upper sides of the floating gates. The control gate Line crosses the active areas while having an extension part(WL e) located between adjacent floating gates. The extension part is overlapped with the side walls of the adjacent floating gates, and a first spacer(141) is arranged on the side wall which is overlapped with the control gate line. A first spacers is extended between the side wall of the active area and the element isolation film and a second spacer(143) is located between the outer sidewalls of the first spacers and extension part of the control gate Line.