| 摘要 |
A non-volatile memory cell includes a floating gate over a semiconductor substrate, a first capacitor comprising a first plate, the floating gate, and a dielectric therebetween, a second capacitor comprising a second plate, the floating gate, and a dielectric therebetween, a third capacitor comprising a third plate connected to the floating gate, and a fourth plate, wherein the third and fourth plates are formed in metallization layers over the semiconductor substrate. The first plate of the first capacitor includes a first doped region and a second doped region in the semiconductor substrate. The non-volatile memory cell further includes a transistor comprising a gate electrode over the semiconductor substrate, wherein a source/drain region of the transistor is connected to the first doped region of the first capacitor.
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