| 摘要 |
A manufacturing method of the semiconductor device is provided to prevent the collapse of the mask pattern by using the connection patterned portion of the mask pattern functioning as a support. The insulating layer is formed on the semiconductor substrate. The mask pattern(208) is formed on the insulating layer. The mask pattern comprises the patterned portion(208a) and one or more connection patterned portion(208b). The pattern portion is arranged in parallel in bar type. The insulating layer patterned by using the mask pattern and the insulating layer pattern is formed. The insulating layer pattern has the opening exposing the semiconductor substratre.
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