发明名称 MAGNETRON SPUTTERING APPARATUS USING HOT CATHODE
摘要 A magnetron sputtering apparatus for using a hot cathode is provided that the film deposition rate can be increased and the used amount of the electrical energy can be reduced. A magnetron sputtering apparatus(40) using a hot cathode comprises a magnet system(42) which is equipped with two or more permanent magnets(42b) which horizontally falls down, a target(41) which is arranged between the permanent magnet, and the role of cathode, an anode(43) which is arranged in order to surround the surrounding of the magnet system, a cooling system which is positioned in the lower part of target, and a gasket(48) which has the insulating property and the conductivity, a power supply unit which supplies the current to the target and anode respectively, and a temperature controller which controls the power supply unit.
申请公布号 KR20090033661(A) 申请公布日期 2009.04.06
申请号 KR20070098804 申请日期 2007.10.01
申请人 SUHEUNG PLASMA CO., LTD. 发明人 VICTOR CHAYREV;KIM, JUNG SIK
分类号 C23C14/35 主分类号 C23C14/35
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