发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To achieve thinning of a semiconductor device having an external connection terminal formed on one side. SOLUTION: The manufacturing process of a semiconductor device includes a process for half-cutting a resin from one side of a substrate, a process for immersing the half-cut substrate into water while directing the side on which the external connection terminal is formed upward, and freezing the water such that the upper surface of ice becomes substantially flush with the upper surface of the external connection terminal of the substrate or is located above the upper surface of the substrate, and a process for grinding a resin formed on the other side of the substrate at least up to the half-cut position. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009070880(A) 申请公布日期 2009.04.02
申请号 JP20070235088 申请日期 2007.09.11
申请人 NEC ELECTRONICS CORP 发明人 UOYA KOSAKU
分类号 H01L21/301;H01L21/304 主分类号 H01L21/301
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