| 摘要 |
PROBLEM TO BE SOLVED: To improve a read margin of a ferroelectric memory device, and to improve read characteristics of the ferroelectric memory device. SOLUTION: The ferroelectric memory device includes a first p-channel MISFET (P1-L) which is connected between a first mode (Vm-L) and a third node (Vc-L), and of which the gate electrode is connected to a second node (Vmn-R), a second p-channel MISFET (P1-R) which is connected between the second node and a fourth node (Vc-R), and of which the gate electrode is connected to the first node, a first charge-transfer MISFET (T2-L) which is connected between a first bit line (BL-L) and the first node (Vmn-L), a second charge-transfer MISFET (T2-R) connected between a second bit line (BL-R) and the second node (Vmn-R), a first capacitance (C5-L) connected to the first node, and a second capacitance (C5-R) connected to the second node. COPYRIGHT: (C)2009,JPO&INPIT
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