发明名称 SHORT-CIRCUIT CHARGE-SHARING TECHNIQUE FOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide charge-sharing between two or more circuits with a simple shorting transistor controlled to achieve the desired operating voltage levels. SOLUTION: The shorting transistor which can be either a P-channel Metal Oxide Semiconductor (PMOS) device or an N-channel Metal Oxide Semiconductor (NMOS) device and can be controlled utilizing the same clock that enables the drive of the signals between which charge-sharing occurs. In operation, the desired operating voltage levels can be regulated by increasing and decreasing the pulse width of the control circuit output to the gate of the shorting transistor. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009071792(A) 申请公布日期 2009.04.02
申请号 JP20070269576 申请日期 2007.10.16
申请人 UNITED MEMORIES INC;SONY CORP 发明人 PARRIS MICHAEL C;KIM C HARDEE
分类号 H03K19/00;H03K17/22;H03K19/0948 主分类号 H03K19/00
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