发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURE HAVING HETEROGENEOUS CRYSTALLINE ORIENTATIONS |
摘要 |
<p>METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURE HAVING HETEROGENEOUS CRYSTALLINE ORIENTATIONS A method for fabricating a semiconductor structure having heterogeneous crystalline orientations by forming a region including a semiconductor material having a specified crystalline orientation using an epitaxial buffer overlying a semiconductor substrate. The buffer provides a transfer body such that the semiconductor material has a crystalline orientation that differs from the crystalline orientation of a semiconductor region underlying the buffer. The method also includes fabricating a semiconductor structure having a p-type device region and an n-type device region, where a supporting semiconductor substrate is either n-type or p-type and where the semiconductor material is separated from the substrate by a buffer and has a crystalline orientation that differs from the crystalline orientation of the substrate.</p> |
申请公布号 |
SG150479(A1) |
申请公布日期 |
2009.03.30 |
申请号 |
SG20080062028 |
申请日期 |
2008.08.21 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
JINPING LIU;SEE ALEX KH;SHENG ZHOU MEI;CHOO HSIA LIANG |
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