| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide structure wherein the silicon carbide structure holds the shape of a structure which mainly comprise carbon and which has not been realized by a conventional method, and can be produced more simply than a conventional method at a low temperature and in a short time. SOLUTION: The method is characterized in that a structure mainly comprising carbon is heated in a reaction vessel in an inert gas atmosphere and at a state of being added with a sodium molten liquid containing silicon, the main crystal structure of silicon carbide in the resultant silicon carbide structure after heating isβ-type and the heating temperature for the structure mainly comprising carbon is 600°C or higher and 1,200°C or lower. COPYRIGHT: (C)2009,JPO&INPIT
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