SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing the occurrence of punch through caused by a flaw, or the like during a manufacturing process in a vertical semiconductor device. SOLUTION: The semiconductor device 100 that is a vertical IGBT includes a collector electrode 2, a p+-type collector layer 4, an n+-type buffer layer 6, an n--type drift layer 8, a p-type body region 10, an n+-type emitter region 12, a gate electrode 18, and an emitter electrode 14. There is an irregular shape 32 comprising a recess 28 and a projection 30 on the backside of the semiconductor device 100. An interval L2 between the bottom surfaces of the adjacent recesses 28 is not more than 0.7 times larger than the thickness L1 of the buffer layer 6, thus forming the buffer layer 6 successively in depth separated from the bottom surface of the recess by a fixed distance. The buffer layer 6 can be formed at a deep position from a back contact surface, thus suppressing the occurrence of a punch through phenomenon caused by the flaw, or the like during the manufacturing process. COPYRIGHT: (C)2009,JPO&INPIT