发明名称 DEVICE AND METHOD FOR GROWING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a device and method for growing a single crystal which facilitate the growth of a large-sized single crystal. SOLUTION: The single crystal growing device for growing the single crystal by forming a melting zone 31 in a contact part by heating the contact part wherein a hollow single crystal precursor 21 and a seed crystal 22 are brought into contact includes: a seed crystal holding part 19 which can hold the seed crystal 22; precursor holding parts 11 and 18 which can hold the single crystal precursor having a hollow part to be an energy transmitting route to be contacted with the seed crystal 22; a first heating part which is composed of a halogen lamp 17 and an elliptic mirror 16 and heats the melting zone by irradiating it with the first heating energy; and a second heating part for heating the melting zone 31 by irradiating it with the second heating energy (laser beams) different from the first heating energy from a laser beam source 41 through optical fibers 42 and through the energy transmitting route in the single crystal precursor. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009051679(A) 申请公布日期 2009.03.12
申请号 JP20070217907 申请日期 2007.08.24
申请人 NIPPON LIGHT METAL CO LTD 发明人 SUZUKI SATOHITO;OHIRA SHIGEO
分类号 C30B13/24 主分类号 C30B13/24
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