METHOD OF RAISING ENERGY BAND GAP OF CRYSTALLINE ALUMINUM OXIDE LAYER, AND METHOD OF MANUFACTURING CHARGE TRAP MEMORY DEVICE PROVIDED WITH CRYSTALLINE ALUMINUM OXIDE HAVING HIGH ENERGY BAND GAP

摘要

PROBLEM TO BE SOLVED: To provide a method of raising the energy band gap of a crystalline aluminum oxide layer, and a method of manufacturing a charge trap memory device provided with a crystalline aluminum oxide layer having a high energy band gap. SOLUTION: The method of raising the energy band gap of an aluminum oxide layer includes a first step of forming an amorphous aluminum oxide layer on a bottom film, a second step of introducing hydrogen (H) or hydroxyl group (OH) into the amorphous aluminum oxide layer, and a third step of crystallizing the amorphous aluminum oxide layer with the introduced hydrogen or hydroxyl group. Thus, the energy band gap of the crystallized aluminum oxide layer is not less than 7.0 eV. COPYRIGHT: (C)2009,JPO&INPIT