| 摘要 |
864,222. Semi-conductor devices. POSTMASTER GENERAL. Feb. 22,1957 [Feb. 23, 1956], No. 5706/56. Class 37. A method of making a semi-conductor device comprises the steps of incorporating a deathnium impurity such as nickel into a piece of activator impurity characteristic of one conductivity type, and then heating the impurity in contact with a semi-conductor body of opposite conductivity type to form a PN junction therewith and to diffuse the deathnium impurity into the body. In one embodiment an indium wire is rolled to a foil 25 to 100Á thick, degreased, brightened by momentary immersion in a solution of equal parts concentrated nitric and hydrochloric acids, rinsed, and then electroplated with nickel to a thickness of 0.1-1% of the thickness of the foil. The plated foil is then cut or punched into small pieces which are made spherical by heating to 850‹ C. in hydrogen. One of the spheres is placed on one face of a wafer of N-type germanium of 0.5-10 ohm cm. resistivitv and the assembly heated to 600-850‹ C. for 1 to 15 minutes and then rapidly cooled to room temperature. The wafer is then placed on a foil of an antimony doped solder mounted on a nickel or " Kovar " (Registered Trade Mark) base, and the assembly heated to 550‹ C. until the solder wets the base and germanium and then rapidly cooled. Leads are then attached to the device before it is finally cleaned by etching. Use of silicon or silicon germanium alloys instead of germanium is suggested.
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