发明名称 Pass through via technology for use during the manufacture of a semiconductor device
摘要 A method for forming vias which pass through a semiconductor wafer substrate assembly such as a semiconductor die or wafer allows two different types of connections to be formed during a single formation process. One connection passes through the wafer without being electrically coupled to the wafer, while the other connection electrically connects to a conductive pad. To connect to a pad, a larger opening is etched into an overlying dielectric layer, while to pass through a pad without connection, a narrower opening is etched into the overlying dielectric layer. An inventive structure resulting from the method is also described.
申请公布号 US7498260(B2) 申请公布日期 2009.03.03
申请号 US20070732356 申请日期 2007.04.03
申请人 MICRON TECHNOLOGY, INC. 发明人 HIATT WILLIAM M.
分类号 H01L21/44 主分类号 H01L21/44
代理机构 代理人
主权项
地址