| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of preventing a film thickness detecting function from being damaged even when the width of an initial insulating film is narrowed and an occupancy area ratio is lowered while sectioning unit cells by the initial insulating film, shortening the epitaxial growth time, shortening the polishing time, and increasing film thickness accuracy after polishing. SOLUTION: The manufacturing method of the semiconductor device has a process of forming a first opening 3 so as to leave an initial oxide film 2 to be a film thickness reference in polishing at the outer peripheral part 17 of an active part inside the active part 16, filling the first opening 3 by epitaxial growth from two second openings 5-1 and 5-2 which are provided on a substrate oxide film 4 formed at the bottom part of the first opening 3 for each unit cell including the section opening of the respective unit cells, then polishing the grown film 14 with the thickness of the initial oxide film as a reference to turn it to a single crystal thin film 15, then forming a third opening 5-3 on the crystal thin film 15 so as to correspond to the section opening of the unit cell and re-filling it with an insulating film 2-1. COPYRIGHT: (C)2009,JPO&INPIT
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