| 摘要 |
PROBLEM TO BE SOLVED: To reduce joint leakage in a structure where an eSiGe layer or the like is embedded in a source/drain region sandwiching a channel region. SOLUTION: In the semiconductor device, a semiconductor epitaxial layer is embedded in a source/drain region. The device comprises a gate electrode 104 formed through a gate insulating film 103 on an element formation region enclosed with an element separation region 102 formed on the main surface of a semiconductor substrate 100, a semiconductor epitaxial layer 110 which is formed in the source/drain region sandwiching the channel region under the gate electrode 104, having a 3-layer structure where first semiconductor films 111 and 113 of materials different from that of the substrate 100 sandwich a second semiconductor film 112 having a higher siliciding reaction, and a silicide layer 126 which is formed on the gate electrode 104 and the epitaxial layer 110, and extends to the semiconductor film 112 along the interface between the substrate 100 and the epitaxial layer 110. COPYRIGHT: (C)2009,JPO&INPIT
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