发明名称 Protection in integrated circuits
摘要 A method including, prior to a plasma heat-up operation, forming a liner on a structure coated with an insulator. And a method including forming a trench on a substrate, forming an insulator on the trench, and after forming a liner having a thickness of between about 50 angstroms and about 400 angstroms on the insulator, applying a plasma heat-up operation to the substrate.
申请公布号 US7494894(B2) 申请公布日期 2009.02.24
申请号 US20020231388 申请日期 2002.08.29
申请人 MICRON TECHNOLOGY, INC. 发明人 RUEGER NEAL R.;BUDGE WILLIAM;LI WEIMIN
分类号 H01L21/762 主分类号 H01L21/762
代理机构 代理人
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