| 发明名称 |
PRODUCING SOI STURCTURE USING ION SHOWER |
| 摘要 |
Disclosed are methods for making SOI and SOG structures using ion shower for implanting ions to the donor substrate. The ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
|
| 申请公布号 |
KR20090018850(A) |
申请公布日期 |
2009.02.23 |
| 申请号 |
KR20087032079 |
申请日期 |
2008.12.30 |
| 申请人 |
CORNING INCORPORATED |
发明人 |
CITES JEFFREY S.;GADKAREE KISHOR P.;MASCHMEYER RICHARD O. |
| 分类号 |
H01L21/265;H01L21/20;H01L27/12 |
主分类号 |
H01L21/265 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
