| 摘要 |
A semiconductor light emitting device and manufacturing method thereof are provided to improve the light extraction efficiency by being formed as the uneven structure to the reflector layer and light emitting structure. The semiconductor light emitting device(100) comprises the semiconductor layer(120) and light emitting structure. The semiconductor layer has the concavo-convex surface. Each layer(140,150) of the light emitting structure is formed with the concavo-convex shape on the concavo-convex surface of the semiconductor layer. The substrate having the mask pattern is positioned under the semiconductor layer of the concavo-convex surface. The mask pattern can be formed with the SiO2, SiOx, SiN2, SiNx, SiOxNy or the metal material.
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