| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the emission efficiency of a nitride semiconductor light emitting element and obtain a light emitting element of few damages with good yield. <P>SOLUTION: The nitride semiconductor light emitting element has a sapphire substrate and a nitride semiconductor layer containing a light emitting layer laminated on the substrate, wherein the surface of the sapphire substrate is a surface on which unevenness is formed and the normal of a side surface of the nitride semiconductor layer has an angle that is 90° or larger and 180° or smaller relative to the normal of the front surface of the nitride semiconductor layer. The method for manufacturing the nitride semiconductor element having the sapphire substrate on whose surface unevenness is formed and the nitride semiconductor layer containing the light emitting layer laminated on the substrate includes a first step that removes at least a part of a region for dividing the nitride semiconductor layer into each element with laser and a second step that performs wet etching on the side surface of the nitride semiconductor layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
