发明名称 |
A METHOD OF ULTRA-SHALLOW JUNCTION FORMATION USING SI FILM ALLOYED WITH CARBON |
摘要 |
<p>A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.</p> |
申请公布号 |
EP2024531(A2) |
申请公布日期 |
2009.02.18 |
申请号 |
EP20070797298 |
申请日期 |
2007.04.30 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KIM, YIHWAN;FOAD, MAJEED A.;CHO, YONAH;YE, ZHIYUAN;ZOJAJI, ALI;SANCHEZ, ERROL |
分类号 |
C23C16/00;B05D3/02;C30B23/00;C30B25/00 |
主分类号 |
C23C16/00 |
代理机构 |
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