| 摘要 |
A manufacturing method of semiconductor device is provided to stabilize and simplify a removing process by performing the removing process of silicone residue inside a strip device for a hard mask strip. A first hard mask film containing carbon is formed on an etched layer. A second hard mask film pattern(13E) containing silicone is formed on the first hard mask film. The first hard mask film is etched by using the second hard mask film pattern as an etching barrier wall. The etched layer is etched by using the first hard mask film as an etching barrier wall. The first hard mask film is removed. A residue generated by the second hard mask film is removed inside a device removing the first hard mask film.
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